Infineon IPP90R1K2C3 CoolMOS™ PFD7 Power Transistor: Technical Overview and Application Note

The Infineon IPP90R1K2C3 is a state-of-the-art superjunction MOSFET belonging to the revolutionary CoolMOS™ PFD7 family. Engineered to set new benchmarks in efficiency and power density, this 900V, 15.6A transistor is specifically designed for demanding switched-mode power supplies (SMPS), particularly in power factor correction (PFC) stages and hard-switching topologies like flyback and boost converters.

A core innovation of the PFD7 technology is its integrated fast body diode. This feature is critical for performance in zero-voltage switching (ZVS) or quasi-resonant (QR) operation, commonly required in modern high-efficiency PFC circuits. The diode's exceptional reverse recovery characteristics (Qrr) significantly reduce switching losses and minimize electromagnetic interference (EMI), leading to cooler operation and higher system reliability. This allows designers to push switching frequencies higher without sacrificing efficiency, thereby enabling the use of smaller passive components and increasing overall power density.

Furthermore, the IPP90R1K2C3 boasts an ultra-low effective output capacitance (Coss,eff). This parameter is vital for minimizing turn-on losses in hard-switching applications, contributing to superior efficiency across a wide load range. The combination of low gate charge (Qg) and low on-resistance (R DS(on) of just 90 mΩ (max.) ensures that both switching and conduction losses are kept to an absolute minimum.

Application Highlights:

Server & Telecom Power Supplies: Ideal for 80 Plus Titanium-level efficiency PFC stages due to minimal losses.

Industrial SMPS: Provides robust performance and high reliability in harsh environments.

Lighting: Suitable for high-performance LED driving solutions.

Consumer Electronics: Enables compact and efficient adapters and chargers.

When designing with this MOSFET, careful attention must be paid to gate driving and layout parasitics. A recommended gate driver voltage (VGS) of 15V ensures optimal R DS(on), and a low-inductance layout is mandatory to avoid voltage spikes and ensure stable, reliable switching performance. Proper heatsinking is also essential to utilize the device's full current capability.

ICGOODFIND: The Infineon IPP90R1K2C3 CoolMOS™ PFD7 represents a significant leap in high-voltage switching technology. Its integrated fast body diode and exceptionally low Coss,eff make it a premier choice for engineers aiming to maximize efficiency and power density in next-generation power supplies, particularly in PFC applications.

Keywords:

CoolMOS™ PFD7

Power Factor Correction (PFC)

Integrated Fast Body Diode

Output Capacitance (Coss)

Switching Loss