Infineon IPW60R160P6: The High-Performance CoolMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power MOSFET is a critical component, dictating overall performance, thermal management, and reliability. The Infineon IPW60R160P6 stands out as a premier solution, engineered to meet these challenges head-on. As part of Infineon's renowned CoolMOS™ P6 series, this MOSFET is specifically designed for high-efficiency switching applications, including switch-mode power supplies (SMPS), server and telecom power, and industrial motor drives.

A key differentiator of the IPW60R160P6 is its exceptional low on-state resistance (RDS(on)) of just 160 mΩ maximum at a drain-source voltage (VDS) of 650 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Designers can achieve cooler-running systems, often allowing for smaller heat sinks and a more compact overall form factor, thereby pushing the boundaries of power density.

Furthermore, the device showcases superior switching characteristics. The advanced superjunction technology underpinning the CoolMOS™ P6 series ensures rapid switching speeds combined with low gate charge (Qg) and low effective output capacitance (Coss(eff)). This trifecta significantly reduces switching losses, which are a major contributor to inefficiency at high frequencies. The result is a MOSFET that excels in both hard-switching and soft-switching topologies, enabling designers to increase switching frequencies without a punitive efficiency penalty. This capability is crucial for shrinking the size of magnetic components like transformers and inductors.

Beyond raw performance, the IPW60R160P6 is built for robustness and reliability. It features a high avalanche ruggedness and an integrated fast body diode that enhances its resilience in demanding environments, such as during inductive load switching or in power factor correction (PFC) circuits. This intrinsic robustness helps to improve the overall longevity and field reliability of the end application.

In summary, the Infineon IPW60R160P6 is not just another power MOSFET; it is a high-performance enabler for the next generation of efficient power electronics. By masterfully balancing ultra-low conduction losses, fast switching speeds, and proven ruggedness, it provides engineers with a key component to optimize their designs for performance, size, and cost.

ICGOOODFIND: The Infineon IPW60R160P6 CoolMOS™ is a top-tier 650 V power MOSFET that sets a high bar for efficiency and reliability in power conversion. Its standout features include an ultra-low RDS(on) of 160mΩ, excellent switching performance for reduced losses, and a robust design ideal for high-density SMPS, industrial drives, and PFC stages.

Keywords:

CoolMOS™ P6

Low RDS(on)

High-Efficiency Switching

650 V Power MOSFET

Power Density