Infineon BFN24E6327: A High-Performance SiGe:C Low-Noase Amplifier for 24 GHz Radar Applications

Release date:2025-10-31 Number of clicks:161

Infineon BFN24E6327: A High-Performance SiGe:C Low-Noise Amplifier for 24 GHz Radar Applications

The rapid advancement of automotive safety systems, industrial sensing, and motion detection has propelled the demand for highly reliable and high-performance 24 GHz radar solutions. At the heart of these systems lies the low-noise amplifier (LNA), a critical component responsible for amplifying weak radar echoes with minimal degradation of the signal-to-noise ratio (SNR). The Infineon BFN24E6327 stands out as a premier solution, engineered to meet the rigorous demands of modern radar applications.

This amplifier is fabricated using Infineon's advanced Silicon-Germanium with Carbon (SiGe:C) bipolar technology. This process technology is a key enabler of its superior performance, offering an excellent combination of high-frequency capability, low noise, and high integration density at a competitive cost. The SiGe:C heterojunction bipolar transistors (HBTs) provide higher breakdown voltages and better thermal stability compared to standard GaAs pHEMTs, making the device exceptionally robust and reliable for automotive-grade applications.

The electrical performance of the BFN24E6327 is impressive. It delivers a high gain of typically 20 dB at 24 GHz, ensuring that even the faintest signals are sufficiently amplified for subsequent processing stages. Crucially, it achieves an exceptionally low noise figure of just 2.2 dB, which is paramount for maximizing the sensitivity and effective range of the radar system. This low-noise characteristic directly translates to the ability to detect smaller objects at greater distances. Furthermore, the device supports a wide bandwidth, making it versatile for various modulation schemes within the 24 GHz ISM band.

Packaged in a compact, surface-mountable PG-SSFP-9-1 housing, the LNA is designed for easy integration into microwave printed circuit boards (PCBs). Its small form factor is ideal for space-constrained designs prevalent in radar sensor modules. The application spectrum for the BFN24E6327 is broad, including:

Automotive Radar: Blind Spot Detection (BSD), Lane Change Assist (LCA), and Rear Cross Traffic Alert (RCTA).

Industrial Radar: Level sensing, proximity detection, and gesture recognition.

Consumer Electronics: Presence detection and smart home automation.

Designed for high-volume manufacturing, this component meets stringent automotive quality standards, ensuring long-term durability and performance consistency even in harsh operating environments.

ICGOOODFIND: The Infineon BFN24E6327 is a benchmark SiGe:C low-noise amplifier that masterfully balances high gain, ultra-low noise, and robust integration. Its exceptional performance characteristics make it an indispensable component for enhancing the sensitivity and reliability of next-generation 24 GHz radar systems across automotive, industrial, and consumer markets.

Keywords: Low-Noise Amplifier (LNA), 24 GHz Radar, SiGe:C Technology, High Gain, Automotive Radar

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