High-Efficiency IHW20N135R3 IGBT Power Module for Advanced Switching Applications

Release date:2025-10-29 Number of clicks:56

High-Efficiency IHW20N135R3 IGBT Power Module for Advanced Switching Applications

The evolution of power electronics is heavily reliant on the development of robust and efficient semiconductor switches. In this domain, the IHW20N135R3 IGBT power module stands out as a premier solution engineered for advanced high-frequency switching applications. This module encapsulates a perfect synergy of low conduction losses and exceptionally fast switching capabilities, making it an indispensable component in modern power conversion systems.

A key attribute of the IHW20N135R3 is its advanced 1350V breakdown voltage rating. This high voltage capability provides a significant safety margin, enhancing system reliability and robustness in demanding environments such as industrial motor drives, renewable energy inverters, and UPS systems. It is specifically designed to operate efficiently at elevated DC-link voltages, a common requirement in three-phase systems.

Furthermore, the module is characterized by its low VCE(sat) and minimal switching losses. The trench gate field-stop IGBT technology employed within ensures superior conductivity and a drastically improved switching speed compared to previous generations. This translates directly into higher system efficiency, reduced thermal stress, and the possibility for higher switching frequencies, which allows for the use of smaller passive components like inductors and capacitors.

Thermal management is simplified by the module's low thermal resistance and integrated NTC thermistor. The package is optimized for efficient heat dissipation, enabling operation at high currents without compromising longevity. The built-in Negative Temperature Coefficient (NTC) sensor allows for real-time temperature monitoring, facilitating sophisticated cooling control and overtemperature protection strategies, which are critical for maintaining system integrity.

Designed for ease of implementation, the module features a low-indunce package layout that minimizes parasitic effects and suppresses voltage overshoot during turn-off. This inherent design strength ensures stable and electromagnetically compatible (EMC) operation, reducing the need for complex snubber circuits and simplifying the overall design process.

ICGOODFIND: The IHW20N135R3 IGBT module is a high-performance, reliable power switch that sets a new benchmark for efficiency and power density. Its combination of high voltage robustness, low losses, and integrated thermal management makes it an exceptional choice for designers pushing the boundaries of performance in advanced power electronics.

Keywords: IGBT Module, High-Efficiency, High-Frequency Switching, 1350V Rating, Thermal Management

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