Infineon IPB065N15N3G: High-Performance 15V OptiMOS 5 Power MOSFET
The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductor components that deliver exceptional performance. Addressing this need, the Infineon IPB065N15N3G stands out as a premier 15V N-channel power MOSFET built on the advanced OptiMOS™ 5 technology platform. This device is engineered to set new benchmarks in power conversion systems, offering an unparalleled combination of low losses, high robustness, and superior switching characteristics.
A defining feature of the IPB065N15N3G is its extremely low figure-of-merit (FOM), characterized by an outstandingly low on-state resistance (R DS(on)) of just 0.65 mΩ maximum. This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates into higher efficiency, especially in high-current applications. Furthermore, the device boasts exceptionally low gate charge (Q G) and output charge (Q oss), which significantly reduce switching losses. This combination allows for operation at higher switching frequencies, enabling designers to use smaller passive components like inductors and capacitors, thereby increasing overall power density.
The benefits of the OptiMOS™ 5 technology are further realized in the MOSFET's thermal performance and reliability. The low losses inherently lead to less heat generation, reducing the thermal stress on the system and simplifying cooling requirements. The IPB065N15N3G is also renowned for its high body diode robustness, ensuring reliable operation during hard commutation and reverse recovery events. This makes it an ideal choice for challenging applications such as synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor drive controllers.
Housed in a space-saving Infineon PG-TDSON-8 package, the component is designed for automated assembly processes and offers an optimized footprint. Its exposed drain pad enhances thermal conductivity, allowing for efficient heat dissipation away from the die and directly into the PCB.
ICGOOODFIND: The Infineon IPB065N15N3G is a top-tier 15V MOSFET that exemplifies the pinnacle of power semiconductor design. Its industry-leading low R DS(on) and superior switching performance make it a critical enabler for next-generation, high-efficiency, and high-power-density solutions across computing, automotive, and industrial sectors.
Keywords: OptiMOS™ 5, Low R DS(on), High Efficiency, Power Density, Synchronous Rectification.
